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Kinetic Monte Carlo surface growth method : ウィキペディア英語版
Kinetic Monte Carlo surface growth method

Kinetic Monte Carlo (KMC) is a form of computer simulation in which atoms and molecules are allowed to interact at given rate that could be controlled based on known physics. This simulation method is typically used in the micro-electrical industry to study crystal surface growth, and it can provide accurate models surface morphology in different growth conditions on a time scales typically ranging from micro-seconds to hours. Experimental methods such as Scanning Electron Microscopy (SEM), X-ray diffraction, and Transmission Electron Microscopy (TEM), and other computer simulation methods such as Molecular Dynamics (MD), and Monte Carlo (MC) simulation are widely used.
== How KMC surface growth works ==


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